Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
?2007 Fairchild Semiconductor Corporation
FDD6N25 Rev. C1
7
www.fairchildsemi.com
相关PDF资料
FDD6N50FTF MOSFET N-CH 500V 5.5A DPAK
FDD6N50TM MOSFET N-CH 500V 6A DPAK
FDD7N20TM MOSFET N-CH 200V 5A D-PAK
FDD7N60NZTM MOSFET N-CH 600V 5.5A DPAK-3
FDD8424H_F085 MOSFET N/P-CH DUAL 40V DPAK-4
FDD8424H MOSFET DUAL N/P-CH 40V TO252-4L
FDD8444L_F085 MOSFET N-CH 40V 50A DPAK
FDD8444 MOSFET N-CH 40V 145A DPAK
相关代理商/技术参数
FDD6N25TM 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N50 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDD6N50F 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTF 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N50FTM 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N50RTF 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD6N50TF 功能描述:MOSFET 500V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N50TF_WS 制造商:Fairchild Semiconductor Corporation 功能描述: